Effects of Al$_{\text{2}}$O$_{\text{3}}$ Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties

A ferroelectric device with a III–V semiconductor is one of the promising candidates for high-performance and energy-efficient electronic and photonic applications. These applications require high remanent polarization and low interface trap density. Here, we examined the ferroelectric characteristic and MOS interface property for the InGaAs metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric capacitor with varying Al $_{\text{2}}$ O $_{{\text{3}}}$ interfacial layer (IL) thickness and crystallization temperature. We found that the atomic layer deposition (ALD)-deposited HfO $_{\text{2}}$ /ZrO $_{\text{2}}$ (HZO) nanolaminates are well crystallized with a (111)-oriented orthorhombic phase on InGaAs crystals at the low crystallization temperature of 400 $^{\circ}$ C. By optimizing the IL thickness and crystallization temperature, the InGaAs MFIS ferroelectric capacitor achieves a high remanent polarization while maintaining a low interface trap density. Furthermore, the InGaAs MFIS ferroelectric capacitor also presents good retention over 10 $^{\text{4}}$ s and endurance in 10 $^{\text{5}}$ –10 $^{\text{6}}$ cycles at 10 kHz.