Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance

Raquel Rodriguez-Lamas,Dolors Pla,Caroline Pirovano,Odette Chaix-Pluchery,Carlos Moncasi,Michel Boudard,Rose-Noëlle Vannier,Carmen Jiménez,Mónica Burriel

Materials today electronics（2023）

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摘要

•TiN is a particularly relevant electrode for novel LMO-based memristive devices•An initialization protocol increases the TiN/LaMnO3+δ /Pt device reliability•These memristive devices work in pulse mode with good cyclability and retention•The active TiN/LaMnO3+δ interface plays a crucial role in the resistive switching

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关键词

Resistive switching,valence change memories (VCMs),manganites,memristive devices,metal organic chemical vapor deposition (MOCVD)

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