High Performance CMOS FDSOI Devices Activated at Low Temperature
2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY(2016)
Key words
3D sequential integration,thermal budget,high performance low temperature FDSOI devices,adapted extension first architecture,mobility boosters,n extension first FDSOI devices,p extension first FDSOI devices,low temperature activated device,CMOS FDSOI devices,temperature 500 C to 600 C,SiGe
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