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High Performance CMOS FDSOI Devices Activated at Low Temperature

2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY(2016)

Cited 11|Views4
Key words
3D sequential integration,thermal budget,high performance low temperature FDSOI devices,adapted extension first architecture,mobility boosters,n extension first FDSOI devices,p extension first FDSOI devices,low temperature activated device,CMOS FDSOI devices,temperature 500 C to 600 C,SiGe
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