Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device

Abstract Attainment of dual band-edge effective work functions by using a single metal gate and single high k gate dielectric via P/BF 2 implantation into a TiN metal gate for HP HKMG CMOS device applications are investigated under a gate-last process flow for the first time. The flat band voltage ( V FB ) modulations of about −750 mV/570 mV for N-/P-type MOS device with P/BF 2 implanted TiN/HfO 2 /ILSiO 2 gate stack are obtained respectively in the experiment range. Suitable low threshold voltages of CMOSFETs are gotten while simultaneously shrinking the EOT. The effects of P/BF 2 ion implantation energy, dose and TiN gate thickness on the properties of implanted TiN/HfO 2 /ILSiO 2 gate stack are studied, the possible mechanisms are discussed. This technique has been successfully integrated into the fabrications of aggressively scaled HP HKMG CMOSFETs and 32 CMOS frequency dividers under a gate-last process flow.