Enhanced luminescence of erbium doped Ga2O3 films and devices by optimizing annealing process

Silicon based erbium doped Ga2O3 films and devices are fabricated. It is found that the intensity of Er3+ ions emission can be enhanced by optimizing the content of sensitizer as well as increasing the optical activity of Er3+ ions in the way of adjusting the annealing process. The indirectly excited luminescence of Er3+ ions can be improved, as measured by photoluminescence and electroluminescence, via selecting N2 as the ambient, decreasing the annealing temperature or prolonging the thermal treatment time. Herein, light emitting devices present the maximum optical power density of-0.84 mu W/cm2. This work proposes a way to optimize the indirect emission by regulating the content of sensitizers and the optical activity of Er3+ ions, beneficial to the practical use of electrically-driven silicon-based light sources.