1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications

•High-voltage 4H-SiC lateral MOSFETs with the DOUBLE-RESURFs structures have been designed and experimentally manufactured.•The blocking capability of the fabricated device is significantly improved, and the highest breakdown voltage (BV) reaches 1540 V.•The best figure of merit (BFOM) achieved is 108 MW/cm2 with the specific ON-resistance (RON,sp) of 21.8mΩ·cm, which is competitive compared to these of reported SiC lateral MOSFETs’.