Wavelet-based rapid identification of IGBT switch breakdown in voltage source converter

The power electronic converters have drawn a lot of attention from investigators in recent years. Modern power electronics converters rely heavily on insulated gate bipolar transistors (IGBT). Conventional distribution systems may be made more reliable, stable, and secure by using a microgrid (MG). An acceptable, enticing, and useful option for power distribution networks is inverter-based MGs. This article describes a method for identifying the IGBT switch breakdown failure (IBDF) in a 3-phase, 3-level Voltage Source Converter (VSC) linked to the photovoltaic (PV) grid. The VSC's output phase voltage was subjected to an analysis based on the Discrete Wavelet Transform (DWT) methodology. Kurtosis, skewness, and root-mean-square (RMS) values of the wavelet coefficients of the output phase voltage harmonic spectra of the VSC are all factored in during studies. For the detection of IBDF, comparative learning has been used to identify the specific parameter that is most suitable. Moreover, the comparative analysis and unique contribution of this investigation have been demonstrated.