Technology and design study of 3D physics-based inductor on FDSOI in GHz-range

This study investigates several ways to improve the quality factor and (or) the inductance by evaluating the possibility to add magnetic materials around an inductor integrated into the BEOL of CMOS technology. Performance boost evaluation is done through 3D numerical simulations of an inductor integrated on an SOI substrate made in a 28 nm UTBB FDSOI technology. The choice of materials and their design topologies are mainly the study parameters which leads to the selection of a solution according to the final application: RF for quantum. We demonstrate an ideal improvement of L by a factor 5 and of Q by a factor 3, and a realistic improvement of Q of 2-turn inductors by 25 % with a shield; 46 % with a patterned magnetic material; and a Q improvement of 1turn inductor by 14 % with an HR substrate.