Defect analysis and microstructural characterization of zinc-substituted cadmium oxide nanocrystallites by positron annihilation and supplementary methods

Physica Scripta(2023)

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摘要
Pure and zinc-doped cadmium oxide nanocrystallites of sizes in the range 25 nm to 16 nm are synthesized by adopting a chemical precipitation method and by varying the doping concentration from 0.0 to 0.25. The decrease in nanocrystallite sizes with increasing substitution is expected from the smaller ionic radii of Zn2+. But more revealing is the interfacial defects formation at higher concentration of doping, which is attributed to the dissimilar crystalline structure of ZnO and CdO. X-ray diffraction patterns show well defined peaks and additional characterisation is done through transmission electron microscopy. The optical band gap measurements indicate the dominance of substitution-induced disorder over the confinement of excitons, leading to a decrease in the band gap energies. The results of positron annihilation studies confirm the cancellation of the existing vacancy type defects in the initial stage, followed by the substitution. Photoluminescence spectra reveal the distinct peaks of optical plasmonic excitations and the defect population in the bandgap and the intensity variations agreed with that of the defect related positron annihilation lifetime intensity. The segregation of ZnO phase leading to the formation of interfacial boundaries is found as a strong deterrent against the success of continued substitution.
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关键词
defects, optical absorption, positron annihilation, vacancies, wide bandgap semiconductors
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