Second-Order Nonlinearity of Excitons in hBN-Encapsulated Monolayer Transition Metal Dichalcogenides

2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)(2023)

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摘要
Monolayer transition metal dichalcogenides (1L-TMDs) are expected for applications to next-generation optoelectronic devices, owing to strong coupling with light. Optical properties of 1L-TMDs are dominated by excitons (electron-hole pairs), which are stable even at room temperature. This is because exciton binding energies are as large as a few hundred meV, derived from the atomic thickness. The low-dimensionality also gives arise to the nonhydrogenic energy level structure of 1L-TMDs excitons unlike those in bulk semiconductors [1]. So far, phenomenological Rytova-Keldysh potential [2], [3] is used for the analyses on the s-series exciton level structure observed in linear spectroscopies [4], [5]. In addition, Berry curvature effects are expected to contribute to the splitting of p-series excitons observed in third-order nonlinear optical responses [6]. However, no unified model picture has been established for the 1L-TMDs exciton level structure.
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关键词
Berry curvature effects,BN/bin,boron nitride-encapsulated monolayer transition metal dichalcogenides,electron-hole pairs,exciton binding energies,MoS2/bin,next-generation optoelectronic devices,nonhydrogenic energy level structure,p-series excitons,phenomenological Rytova-Keldysh potential,s-series exciton level structure,second-order nonlinearity,sum linear frequency generation spectroscopy,temperature 293.0 K to 298.0 K,third-order nonlinear optical responses
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