High Optical Confinement Green SLEDs and LDs with InAlN Claddings

We present the first AIInGaN-based Superluminescent Light Emitting Diodes (SLEDs) featuring an InAIN cladding with an emission wavelength above 51 Onm and state-of-the-art performance. While conventional edge-emitting devices employ non-lattice-matched AIGaN cladding layers (with Al composition of 3-8%), InAIN with an 18% indium composition is lattice-matched to GaN and has a 4-times larger refractive index contrast to waveguiding layers if compared to Alo.o6Gao.94N. These properties make InAIN an ideal cladding candidate for Laser Diodes (LDs) and SLEDs. The increased refractive index contrast is crucial in the green spectral range, where nitride-based devices suffer from strongly reduced modal gain and substrate optical leakage, leading to lower efficiency and far-field emission profiles of lower quality.