Thermoelectric Transport in GaAs-AIGaAs Core-Shell Modulation-Doped Nanowires

Sergej Fust,Jonathan Becker,Damon James Carrad, Dominik Irber,Jakob Seidl,Anton Faustmann, Bernhard Loitsch,Gerhard Abstreiter,Jonathan James Finley,Gregor Koblmueller

2019 Compound Semiconductor Week (CSW)（2019）

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摘要

Semiconductor nanowires (NW) can solve the problem of inefficient conversion of waste heat to electricity. The large surface-to-volume ratio results in reduced thermal transport due to phonon scattering while the electrical performance can be improved by pushing the transport into ballistic regime.

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关键词

thermoelectric transport,semiconductor nanowires,waste heat,ballistic regime,high-performance steep-slope NW-field effect transistors,low-temperature quantum transport,quasi1D subbands,Seebeck voltage,thermal conductivity measurements,room temperature,core-shell nanowire heterostructures,surface-to-volume ratio,thermal transport,phonon scattering,Raman spectroscopy,temperature 4.0 K to 7.0 K,temperature 293.0 K to 298.0 K,GaAs-AlGaAs

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