Simulation of Press-Pack IGBT Unit in Phase Change Cooling Materials

Phase change cooling technology has gradually become a solution to the heat dissipation bottleneck of high-voltage power electronic devices. The research object of this paper is the press-pack IGBT unit. The finite element simulation method is used to simulate the overall heat dissipation of the press-pack IGBT unit when it is placed in the air and immersed in the PCM. Moreover, the junction temperature change of the IGBT chip is analyzed. It is concluded that compared with the chip junction temperature of the press-pack IGBT unit in the air, the chip junction temperature under PCM immersion is much lower and the chip surface temperature is more uniform, which indicates that the phase-change cooling material has a better heat dissipation effect.