Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs

G. Hu,M. G. Gottwald,Q. He,J. H. Park, G. Lauer,J. J. Nowak,S. L. Brown,B. Doris,D. Edelstein, E. R. Evarts,P. Hashemi,B. Khan,Y. H. Kim,C. Kothandaraman,N. Marchack, E. J. O'Sullivan,M. Reuter, R. P. Robertazzi,J. Z. Sun, T. Suwannasiri,P. L. Trouilloud,Y. Zhu,D. C. Worledge

2017 IEEE International Electron Devices Meeting (IEDM)（2017）

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摘要

We report the impact of four key parameters on switching efficiency of STT-MRAM devices with perpendicular magnetic anisotropy: device size, device resistance-area product (RA), blanket film Gilbert damping constant (a), and process temperature. Performance degradation observed in 400°C-processed devices was eliminated by optimizing the perpendicular magnetic tunnel junction (p-MTJ) materials. Furthermore, 400°C-compatible double MTJs were developed for the first time and showed 1.5x improvement in switching efficiency compared to single MTJs with identical free layers.

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关键词

free layer identification,magnetic tunnel junction,blanket film Gilbert damping constant,RA,compatible p-MTJ,compatible double MTJ,perpendicular magnetic tunnel junction materials,device resistance-area product,perpendicular magnetic anisotropy,STT-MRAM devices,STT-MRAM switching efficiency,temperature 400.0 degC

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