22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-l MCU Applications

K. Lee,R. Chao,K. Yamane,V. B. Naik,H. Yang,J. Kwon, N. L. Chung,S. H. Jang,B. Behin-Aein, J.H. Lim,S. K,B. Liu, E. H. Toh, K. W. Gan,D. Zeng,N. Thiyagarajah, L. C. Goh,T. Ling, J. W. Ting,J. Hwang,L. Zhang,R. Low,R. Krishnan,L. Zhang,S. L Tan, Y. S. You,C. S. Seet,H. Cong,J. Wong, S. T. Woo, E. Quek,S. Y. Siah

2018 IEEE International Electron Devices Meeting (IEDM)（2018）

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摘要

We demonstrate 22-nm FD-SOI 40Mb embedded MRAM (eMRAM) macros for automotive-grade-l (Auto-G1) MCU applications, highlighting sub-ppm to bit error rate and zero failure after 1M endurance cycles across Auto-G1 operating temperature range (-40∼150 °C). Read disturbance characterization with external field also reveals that 40Mb eMRAM macro is capable of active-mode magnetic immunity > 500 Oe at 150 °C. In addition, based on 22-nm eMRAM macro data, we review the effects of magnetic tunnel junction (MTJ) size on reliability and examine scalability of eMRAM technology beyond 22 nm.

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关键词

22-nm eMRAM macrodata,low-power automotive-grade-l MCU applications,MRAM technology,eMRAM technology,Auto-G1 operating temperature range,1M endurance cycles,MRAM macros,size 22.0 nm,temperature 150.0 degC

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