High thermoelectric properties realized in polycrystalline (Ag, Ga) Co-doped SnSe via two-steps point defects modulation
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T(2023)
摘要
Tin selenide materials have attracted much attention due to the intrinsic low thermal conductivity. However, the further application of SnSe materials is limited due to the poor electrical conductivity. Herein, a two-step doping process is employed on p-type polycrystalline SnSe materials to enhance the thermoelectric properties. It is found that the Sn0 & sdot;98Ag0.01Ga0.01Se sample achieves a high ZT value of 1.53 at 823 K and a quite competitive ZTave value of 1.04 from 673 to 823 K. This is attributed to the associations of point defects, Ag ' Sn, Ga & sdot;Sn, and Ga0, and nano-precipitates, SnGa4Se7, Ag9GaSe6 and AgGa1+delta. In those defects, Ag ' Sn acts as an accepter, which can conduce to enhancing the hole carrier concentration. Ga element doping astonishingly play dual-roles, in that it both faultlessly maintains the electrical transport properties and effectively decreases the thermal conductivity through the associations with the point defects, Ga & sdot;Sn, and Ga0, and nano-precipitates, SnGa4Se7, Ag9GaSe6 and AgGa1+delta. The method paves the way for achieving high thermoelectric properties in SnSe materials by the point defects engineering and nano-precipitates.
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关键词
Polycrystalline SnSe,Point defects engineering,Nano-precipitates,Lattice thermal conductivity
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