A K-band Driven Power Amplifier for Automotive Radar Applications in 0.15-µm GaAs pHEMT Process
2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall)(2019)
摘要
In this paper, a K-band driving power amplifier (DPA) with high gain and high output 1 dB compression point (P
-1
dB,
out
) is presented, which is designed and manufactured in the 0.15-μm GaAs pHEMT process. In order to achieve high gain with simple direct current (DC) bias, the four-stage common source amplifier based on self-biased techniques are employed. The DC feed network adopts a dual inductors topology, which makes the DPA achieve a high power capacity threshold. Furthermore, in order to obtain higher linearity and P
-1
dB,
out
, the maximum power output matching are adopted in the DPA. The DPA exhibit a measured gain more than 20 dB, and a P
-1
dB,
out
over 16 dBm from 20 to 26 GHz and the S
11
and S
22
are less than -8.5 dB within the entire band of frequencies, it is just with only one DC feed pad and serviceable for the automotive radar applications.
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关键词
DPA,automotive radar applications,pHEMT process,K-band driving power amplifier,simple direct current bias,four-stage common source amplifier,self-biased techniques,DC feed network,dual inductors topology,high power capacity threshold,maximum power output matching,K-band driven power amplifier,frequency 20.0 GHz to 26.0 GHz,size 0.15 mum,GaAs
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