0.3 Ga

Narrow and Stable GaN/AlGaN UV Light Source by Using Strain Relaxing Superlattices

2020 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)(2020)

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摘要
A GaN/Al 0.3 Ga 0.7 N UV light source with GaN/Al x Ga 1-x N strain relaxing superlattices on c-plane sapphire was proposed. Narrow and much more stable emission on excitation power with relaxed strain were demonstrated by micro-PL and Raman spectroscopy.
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关键词
strain relaxing superlattices,UV light source,c-plane sapphire,excitation power,Raman spectra,microPL spectra,GaN-AlGaN,GaN-AlGaN,Al2O3
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