Next generation 1200V, 3.5mΩ.cm² SiC planar gate MOSFET with excellent HTRB reliability

In this paper, we report on 1200V SiC planar gate MOSFETs with an improved tradeoff between on-resistance and reverse bias gate oxide electric field. The improved tradeoff was obtained by optimizing the JFET doping profile and unit cell design. These MOSFETs showed a specific on-resistance of 3.5mOhm.cm ² at room temperature, increasing to 5.9mOhm.cm ² at 175°C, along with excellent High Temperature Reverse Bias (HTRB) reliability as shown by no failures after stressing at 1440V, 175°C for 1000 hours.