Fabrication and characterization of ZnO/Al2O3 thin film transistors: channel length effect study

Zinc oxide thin films have gained an important attention for several applications, especially thin film transistors. This is mainly due to the lower cost compared to other materials, also their attracted electrical properties, such as high charge mobility and transparency. In this work, authors report an experimental analysis of ZnO/Al 2 O 3 based thin film transistors with different channel lengths varying from 30 to 60μm at room temperature. Both realization and electrical characterization of the elaborated samples were carried out. An apparent effect of channel length variation on the electrical parameters such as threshold voltage, high field-effect mobility, subthreshold swing and On-off current state ratio extracted from the transfer characteristics was investigated.