RTN impacts on RRAM-based Nonvolatile logic circuit

Yao-Tian Ling,Zong-Wei Wang,Yi-Chen Fang,Jian Kang,Lin-Dong Wu,Yu-Chao Yang,Yi-Mao Cai,Ru Huang

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)（2018）

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摘要

Random telegraph noise (RTN) in resistive random access memory (RRAM) introduces variation in resistance which might cause errors in RRAM based logic circuits. In this paper, we find multiple RTN patterns in RRAM devices and build a simulation model. Using this model, noise immunity of a RRAM based IMP logic circuit is evaluated and method to suppress RTN's effect is proposed.

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关键词

random telegraph noise,resistive random access memory,multiple RTN patterns,RRAM devices,noise immunity,IMP logic circuit,nonvolatile logic circuit,RTN effect

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