Design and Optimization of a GaAs Millimeter-Wave On-Chip Patch Antenna

2023 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (USNC-URSI)(2023)

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摘要
This paper presents the design of an ultra-thin, inset-feed rectangular patch on-chip antenna in a pHEMT 0.1µm GaAs process. The antenna covers the 60 GHz ISM band, achieving a maximum simulated realized gain and efficiency of 2.29 dBi and 69.68%, respectively, and a -10 dB return loss bandwidth from 59.7 to 61.8 GHz. The antenna has a small and thin footprint of 1.5×1.5×0.07 mm 3 , which makes it suitable for 5G, Internet-of-Things, and millimeter-wave communication systems.
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5G communication systems,frequency 59.7 GHz to 61.8 GHz,GaAs/int,gain 2.29 dB,inset-feed rectangular patch on-chip antenna,Internet-of-Things communication systems,ISM band,loss -10.0 dB,millimeter-wave communication systems,millimeter-wave on-chip patch antenna design,pHEMT process,return loss bandwidth,size 0.07 mm,size 0.1 mum,size 1.5 mm
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