Gain Properties of Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers

The dilute-As InGaNAs-based quantum well (QW) active region and the corresponding large-overlap design are analyzed by using a self-consistent 6-band $k\cdot p$ method. Our low-In content $(< 20\%)$ design shows an ~25% enhancement in optical gain compared to the difficult-to-synthesize high In-content $(>30\%)$ conventional structure.