A 400 W Continuous Wave Power Amplifier in L-Band with single GaN Transistor

Bharathidasan Sugumaran,Oliver Silva,Felix Vega,Chaouki Kasmi

2023 XXXVth General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS)（2023）

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摘要

This paper presents the design, manufacturing and testing of a continuous-wave 400 W Power amplifier in L-Band. The device is based on a single GaN high power transistor mounted in a connectorized module. The amplifier demonstrates an output power higher than 400 W at 3 dB compression. This is the highest power achieved by a single device amplifier reported on L-Band to date. Moreover, the measured gain is 15 dB and PAE is 72%.

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