Fully CMOS-compatible integrated distributed feedback laser with 250 °C fabricated Al2O3:Er³⁺ gain medium

Emir Salih Magden,Purnawirman,Nanxi Li,Gurpreet Singh,Jonathan D. B. Bradley, Gale S. Petrich,Gerald Leake,Douglas D. Coolbaugh,Michael R. Watts,Leslie A. Kolodziejski

2016 Conference on Lasers and Electro-Optics (CLEO)（2016）

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摘要

We demonstrate a DFB laser with a record low temperature (250 °C) fabrication process of low-loss (>0.1 dB/cm) amorphous Al ₂ O ₃ :Er ³⁺ gain medium by utilizing the substrate bias, facilitating laser integration in a fully CMOS-compatible platform.

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关键词

low temperature fabrication process,laser integration,substrate bias,low-loss amorphous gain medium,DFB laser,fully CMOS-compatible integrated distributed feedback laser,temperature 250 degC,Al2O3:Er

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Fully CMOS-compatible integrated distributed feedback laser with 250 °C fabricated Al2O3:Er3+ gain medium

Fully CMOS-compatible integrated distributed feedback laser with 250 °C fabricated Al2O3:Er³⁺ gain medium