III-V/Si Adiabatic-Crossing Taper Structure Designed for μ-Transfer Printing

2020 Conference on Lasers and Electro-Optics (CLEO)(2020)

引用 0|浏览2
暂无评分
摘要
We propose an efficient and robust adiabatic-crossing coupler for a μ-transfer printed III-V/Si platform. Two-stage GaInAsP/InP tapers equipped with a side terrace are designed to maximize the efficiency (1.26 dB/coupling on average) and bonding area.
更多
查看译文
关键词
μ-transfer printing,adiabatic-crossing coupler,bonding area,GaInAsP-InP-Si
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要