Electrically Pumped Light-Emitting Device Based on MoTe2 Directly Integrated with Doped Silicon
2020 Conference on Lasers and Electro-Optics (CLEO)(2020)
摘要
We demonstrate an electrically pumped light emitting device by integrating a monolayer MoTe
2
directly on doped Silicon to form a Si-MoTe
2
double heterostructure. An external quantum efficiency of ~0.65% was achieved.
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关键词
electrically pumped light-emitting device,doped silicon,monolayer materials,double heterostructure,external quantum efficiency,Si-MoTe2
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