AlGaN/GaN HEMTs large signal model considering nonlinear Cds

A high breakdown voltage AlGaN/GaN HEMTs is fabricated by using source-connected field plate (SCFP) in Dynax. The output capacitance (Cds) of this device shows a strong dependence on Vds. A modified Angelov large signal model considering Cds nonlinearity is presented to achieve a more accurate simulation on efficiency and linearity. The small signal simulation results indicate that the proposed nonlinear Cds model has a better accuracy.