Measurement Based Behavior Modeling for Ultra-low Inductance Silicon Carbide Power Modules

This work presents a novel modeling method that combines the behavior die modeling and direct parasitic measurement for power modules. A sample of SPICE model creation process was performed on the SP6LI packages with industry leading low inductance for power commutation loop. The SPICE model of the SiC die in the power module was modeled by direct measurement of die behavior using a curve tracer and the parasitic parameters in the power module was modelled by direct impedance measurement using an impedance analyzer. Hardware testing results are also presented and compared with model simulation results for model validation. The results prove the accuracy of the proposed modeling method for SP6LI package over a wide variety of working conditions.