Influence of Current Collapse due to $V_{ds}$ Bias Effect on GaN-HEMTs $I_{d}-V_{ds}$ Characteristics in Saturation Region
2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)（2022）
关键词
≪Gallium Nitride (GaN)≫,≪Double pulse test≫,≪Device characterisation≫,≪Switching losses≫,≪Threshold voltage shift≫
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