A cantilever-structured AlkGaN/GaN HEMT for building a strain-controlled platform

We demonstrate the AlGaN/GaN high electron mobility transistor (HEMT) featured with a cantilever structure. The output performances of the HEMT before and after the cantilever fabrication process are investigated. By interacting with the cantilever, the output characteristics can be directly modulated by external strain. Additionally, the output current density shows an approximately linear relation with applied strain. The cantilever-structured AlGaN/GaN HEMT is very suitable to build a strain-controlled platform for artificial intelligence systems.