Lowest IOFF < 3×10−21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)(2023)
摘要
We demonstrate that the retention of IGZO-based 2T0C devices is boosted by patterning the active module by RIE. While IBE generates Al redeposition on the device sidewalls creating an extrinsic conductive path, RIE enables a clean process which suppresses metal redeposition. With RIE, we achieve the lowest $\mathrm{I}_{\mathrm{O}\mathrm{F}\mathrm{F}}$ ever reported for 2T0C cells (<3× 1$0^{-21}$A/$\mu$m), and we successfully perform multi-level and multiply-accumulate operations enabling machine-learning applications. We also demonstrate device functionality down to $\mathrm{L}_{\mathrm{G}}$=25nm.
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关键词
DRAM,IGZO,RIE,2T0C,Capacitorless
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