13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG =2ms, tR =110µs and 1.2Gb/s High-Speed IO Rate
2020 IEEE International Solid-State Circuits Conference - (ISSCC)（2020）
摘要
3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the recent three consecutive years [1]–[3]. Also storage market still requires more bits for diverse digital applications. [4]
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关键词
high-speed IO rate,3D NAND flash memory,3D WL,storage market,3D WL stacking technology,areal density,time 2.0 ms,time 110.0 mus,storage capacity 1 Tbit,bit rate 1.2 Gbit/s
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