24.1 A 6.2 GHz Single Ended Current Sense Amplifier (CSA) Based Compileable 8T SRAM in 7nm FinFET Technology

2021 IEEE International Solid-State Circuits Conference (ISSCC)(2021)

引用 2|浏览1
暂无评分
摘要
8T SRAM, using domino read, is preferred for small-size and high-performance arrays [1]. Ripple domino circuitry relies on rail-to-rail readout, which forces a trade off between performance and the number of 8T cells on a local read bit line (RBL). To support larger array sizes, without sacrificing performance, arrays are segmented, and several segments are stitched to form the full array. Each segment requires local evaluation circuitry to connect local BL to global BLs. This local circuitry, along with the required layout fencing of each segment results in poor array efficiency.
更多
查看译文
关键词
CSA,compileable 8T SRAM,FinFET technology,high-performance arrays,ripple domino circuitry,rail-to-rail readout,local read bit line,larger array sizes,local evaluation circuitry,segment results,array efficiency,single ended current sense amplifier,frequency 6.2 GHz,size 7.0 nm
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要