Avoiding Plasma Damage: MacEtch enabled β-Ga2O3 FinFETs for On-Resistance Reduction and Hysteresis Elimination

Although highly promising, the performance of $\upbeta$ - Ga2O3 transistors are far from their theoretical potentials. Structural innovations by adopting the FinFET geometry remains a relatively virgin field for this material. Here we report the results and discuss the prospect of $\upbeta-\text{Ga}_{2}\mathrm{O}_{3}$ FinFETs fabricated by the plasma-free highly anisotropic metal-assisted chemical etching (MacEtch) method. A specific on-resistance $(\mathrm{R}_{\text{on},\text{sp}})$ of 6.5 $\mathrm{m}\Omega\cdot \text{cm}^{2}$ and a 370 V breakdown voltage are achieved. The MacEtch-formed FinFETs demonstrate near-zero (9.7 mV) hysteresis.