On the Dopant, Defect States, and Mobility in W Doped Amorphous In2O3 for BEOL Transistors

This paper reports modeling and experimental studies on the impact of dopant, defects, and mobility in W doped amorphous In 2 O 3 for BEOL transistors. W doping in amorphous In 2 O 3 is shown to suppress oxygen vacancy (Vo) and to donate electrons. Fundamental material parameters, including defect gap states and carrier mobilities, are characterized by a combined DFT modeling and experiment. The results provide useful information for developing an IWO device compact model, and further improving IWO channel device performance.