Development of power divider in 28 GHz band using Si semiconductor process

A passive device library was built using the Si semiconductor process of the National Nanofab Center, and a power divider that operates in the 28 GHz band was developed using it. The power divider was implemented using 2-layer metal on a Si wafer, and AI 1-um was deposited as the 1st metal and Cu-2.5 urn was deposited as the 2nd metal for good RF performance. The power divider composed of resistor, inductor, and capacitor showed input/output matching of -10.3 dB, -15 dB, isolation characteristics of -17.7 dB and insertion loss of 1.9 dB at 28GHz.