A Miniature D-Band GaAs Low-Noise Amplifier with Customized On-Chip Terahertz Devices

This paper presents design and verification of a miniature D-band GaAs low noise amplifier (LNA) in 70 nm mHEMT GaA $s$ technology. Symmetry cap partition and serpentine CPW configuration are proposed to extend self-resonating frequency and reduce area respectively. By these solution and technique, the designed GaAs low noise amplifier has obtained more than 7.3 dB small signal gain at 135–154 GHz with 11.3 $\mathbf{dB}$ peak gain at 152 GHz. Its measured noise figure is less than 8.8 dB at the range of 136GHz to 154 GHz. The overall chip area including sealing ring is only 0.88 mm2.