Forming-Free Resistive Switching by Lateral Ag Ion Migration on MoS2

We present forming-free volatile resistive switching (RS) in lateral $\mathbf{Ag}-\mathbf{MoS}_{2}-\mathbf{Pd}$ structures with micron-sized electrode gaps. Our devices exhibit highly repeatable volatile RS at switching voltages ~2 V, reasonably fast switching within $\sim 6\mu \mathrm{s}$ at 5 V, and maintain volatile behavior at comparatively higher current compliance $(100\ \mu \mathrm{A})$ than other similar lateral RS devices.