New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO2-based 1T1C FeRAM

The memory window (MW) of $\mathbf{HfO}_{2}$ -based 1T1C FeRAM has been experimentally re-examined by considering the ferroelectric (FE) dynamics. It is found that not only the unsaturated polarization switching will reduce MW with smaller operation voltage and pulse width, but also the large depolarization field induced by multiple positive pulses will degrade the read “1” switching and thus lead to even smaller MW and sensing margin, which suggests more stringent requirements are needed for $\mathbf{HfO}_{2}$ -based FeRAM designs.