Fabrication and Characterization of 5.2 um Quantum-Cascade Lasers Grown by Molecular-Beam Epitaxy

Evgenii S. Kolodeznyi,Andrey V. Babichev,Andrey G. Gladyshev,Nikita Yu. Kharin,Vadim Yu. Panevin,Vladislav V. Dudelev,Sergey O. Slipchenko, Andrey V. Lyutetskii,Leonid Ya. Karachinsky,Innokenty I. Novikov,Nikita A. Pikhtin,Anton Yu. Egorov,Grigorii S. Sokolovskii

2023 International Conference on Electrical Engineering and Photonics (EExPolytech)（2023）

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摘要

We present the results on the fabrication and time-resolved spectral characterization of 5.2 um range quantum-cascade laser. 40 stages of active region are based on strain-compensated In0.6Ga0.4As/In0.44Al0.56As heteropair. The mutli-mode lasing was demonstrated in the 5.09-5.21 um spectral range for lasers with four-cleaved facets. The estimated values of the threshold current density and voltage at 80 K were about 1.1 kA/cm ² and 15 V, respectively. The maximal lasing temperature for lasers with four-cleaved facets was about 210 K.

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关键词

molecular-beam epitaxy,indium phosphide,quantum-cascade lasers

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