A Framework for Reliability Analysis of a SiC Converter for Automotive On-Board Charger Applications

In this paper a method for analyzing reliability of SiC Devices used in a Dual Active Bridge converter is developed. The reliability analysis can be carried out using a simulation model to estimate junction temperature (thermal stresses) of the devices based on realistic mission profiles. The simulation model used for thermal stress estimation has been tuned with laboratory experiments to match power losses and junction temperatures. Applications of the proposed method include: optimal choice of semiconductor materials, evaluation of control schemes, increasing power density.