1.2 kV Trench IGBT with SiC JBS Diode for High Frequency Switching Applications

A hybrid system consisting of the next generation low voltage (LV, 1200 V, 150 A) fine pattern (FP) trench gate Si-IGBT and our state-of-the-art SiC-JBS diode at Hitachi Energy is investigated in this work for its potential device- and system level benefits. Our trench IGBT is designed for improved losses, robustness, and long-term reliability. It is shown that Hitachi Energy’s 1.2 kV FP Trench Si-IGBT combined with an auxiliary SiC-JBS diode offers a viable compromise between conventional Si-based systems and more expensive SiC MOSFET modules. The JBS diode in conjunction with the trench IGBT enables higher switching speeds, lower overall switching losses and improved diode safe operating area.