Optoelectronic investigation of Sb-doped Cu(In,Ga)Se2

Lorelle M. Mansfield,Darius Kuciauskas,Patricia Dippo,Jian V. Li,Karen Bowers,Bobby To,Clay DeHart,Kannan Ramanathan

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)（2015）

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摘要

Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.

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关键词

solar cells,lower-energy PL peak,photoluminescence spectroscopy,admittance spectroscopy,Sb-doped CIGS thin film optoelectronic properties,device performance improvement,grain size enhancement,two-step selenization process precursor,Cu(InGa)Se2:Sb

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