NBTI Defects Characterization Using Energy Profiling Simulation Technique

A numerical simulation framework to simulate the positive charges based on location of energy levels is conducted in this work. This framework utilizes an energy profiling approach, where the behavior of hole traps under stress conditions is studied. In this process, a recovery voltage is applied to facilitate charged hole traps release. The recovery voltage is incrementally increased in the positive direction, to move the Fermi level thus creating the desired energy spectrum. Experimental data suggests that the defect charges responsible for this phenomenon arise from various sources and simulation results able to probe these types of charges.