Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications
MICROMACHINES（2023）
Key words
AlGaN/GaN,high electron mobility transistors (HEMTs),SiNx passivation,low-pressure chemical vapor deposition (LPCVD),ohmic contact,SiNx/GaN interface
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