Impacts of core gate thickness and Ge content variation on the performance of Si
Journal of Computational Electronics(2021)
摘要
In this paper, we investigate the impacts of variation in the core gate thickness and germanium content on the performance of a Si 1− x Ge x source/drain Si-nanotube junctionless field-effect transistor. A SiGe source/drain structure is combined with a core gate inside the nanotube to address and suppress the stringent issue of short-channel effects (SCEs). The effect of gate length, bias voltages, and Ge content on the subthreshold current, threshold voltage, and SCEs has also been studied by developing a compact analytical model including the quantum confinement effect. Our results highlight the utility of core gate and Si 1− x Ge x source/drain to provide an additional degree of freedom to control SCEs in the nanoscale regime.
更多查看译文
关键词
DIBL,Junctionless (JL) FET,Nanotube,Short-channel effects,Surface potential,Threshold voltage roll-off
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要