How the Flat Field Transistor (FFT) can enable the continuation of DRAM scaling
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD(2023)
摘要
In this paper we present a detailed simulation study of the the advantages of the Flat Field Transistor (FFT) developed by Semiwise as a solution to the DRAM scaling problems. The FFT meets all present and future requirements of the DRAM sense amplifiers and peripheries. The improvements cover all related requirements including low variability, low noise, low leakage, high performance, and high reliability. The FFT performance is highlighted in comparison with typical 20 nm bulk CMOS technology transistors. Results illustrating the transistor performance improvement are presented, and the corresponding improvement in the circuit performance is illustrated using sense amplifier.
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关键词
Performance,DRAM,variability,noise,sense amplifier,leakage current,Sense Amplifier.
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