How to Control the State Transformation from Short-Term Potentiation to Long-Term Potentiation of Charge Trapping Synapse?

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD(2023)

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摘要
In this work, the charge trapping- based Gate All Around Transistor (GAA) technology is utilized for the artificial synapse due to its superior performance in terms of low power consumption and high speed. The controlling of state transformation of electronic synapses from short-term potentiation (STP) to long-term potentiation (LTP) is crucial. We have investigated the effect of metal gate workfunction and channel doping on state transformation by using a feedback mechanism (impact ionization). This mechanism regulates channel potentiation and the level of charge trapping in the nitride layer. Our simulation results indicate that this approach can effectively control the STP to LTP transition, while also achieving long STP retention and better dynamic range. This study presents a promising direction for developing advanced electronic devices based on charge-trapping-based GAA transistors.
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关键词
NSFET,Charge Trapping Memory,Synapse features,Short-Term Memory,Long-Term Memory,STP,and LTP
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