Theoretical Limit of TiSi2 Contact Resistance : *Note: Sub-titles are not captured in Xplore and should not be used

Improving contact resistance (R cnt ) becomes increasingly challenge in upcoming technology nodes. To figure out the fundamental limit of R cnt , we employed the first-principles approach. DFT-NEGF analyses are performed considering the atomistic nature of dopant and necessary corrections for silicon band gap, as well as electronic correlation in metal. Our simulation setup successfully predicts the reported Schottky barrier height (SBH) and attainable R cnt in Si/C49-TiSi 2 system.